1ED3124MC12HXUMA1 vs 1EDI60H12AHXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1ED3124MC12HXUMA1 disebabkan oleh Infineon dan 1EDI60H12AHXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1ED3124MC12HXUMA1 1EDI60H12AHXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) —
Number of Drivers 1 —
Bilangan Output 1 —
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) Galvanic isolation via coreless transformer
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
Masa Pertambahan 15 ns —
Masa jatuh 30 ns —
Suhu Operasi -40 C to +125 C -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
Kemasan PG-DSO-8 (DSO-8) PG-DSO-8-59 (DSO-8 with 8 mm creepage)
Jenis Pemasangan Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
Status RoHS Compliant Compliant
Product Type — Single-channel high-side gate driver IC
Isolation Voltage Rating — 1200 V
Number of Channels — 1
Peak Source Current (typ.) — 10.0 A
Peak Sink Current (typ.) — 9.4 A
Konfigurasi Output — Separate source and sink (SEP) outputs
Input Compatibility — CMOS / TTL logic
Driven Device — IGBT (and MOSFET / SiC compatible)
Creepage Distance — 8 mm
Short-Circuit Protection — Short-circuit clamping
Aras MSL — 2 (1 year floor life)

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