1ED3124MC12HXUMA1 vs 1EDI60H12AHXUMA1 比較
詳細並排比較 1ED3124MC12HXUMA1 由 Infineon 與 1EDI60H12AHXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ 啟用中規格比較
| 參數 | 1ED3124MC12HXUMA1 | 1EDI60H12AHXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Channel Type | Single-channel | — |
| Configuration | High-side / Low-side (non-inverting) | — |
| Number of Drivers | 1 | — |
| 輸出數量 | 1 | — |
| Peak Source Current | 13.5 A | — |
| Peak Sink Current | 14 A | — |
| Isolation Technology | Magnetic coupling (coreless transformer) | Galvanic isolation via coreless transformer |
| Isolation Voltage (RMS) | 5.7 kV | — |
| Transient Overvoltage | 8000 Vpk | — |
| Supply Voltage (VCC2) | 10.5 V to 35 V | — |
| Supply Current (Max) | 1.1 mA | — |
| Propagation Delay (Typ) | 90 ns | — |
| 上升時間 | 15 ns | — |
| 下降時間 | 30 ns | — |
| 工作溫度 | -40 C to +125 C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| 封裝 | PG-DSO-8 (DSO-8) | PG-DSO-8-59 (DSO-8 with 8 mm creepage) |
| 安裝類型 | Surface Mount | Surface Mount |
| Protections | UVLO, Short-Circuit (DESAT) | — |
| Target Devices | IGBT, SiC MOSFET | — |
| RoHS 狀態 | Compliant | Compliant |
| Product Type | — | Single-channel high-side gate driver IC |
| Isolation Voltage Rating | — | 1200 V |
| Number of Channels | — | 1 |
| Peak Source Current (typ.) | — | 10.0 A |
| Peak Sink Current (typ.) | — | 9.4 A |
| 輸出配置 | — | Separate source and sink (SEP) outputs |
| Input Compatibility | — | CMOS / TTL logic |
| Driven Device | — | IGBT (and MOSFET / SiC compatible) |
| Creepage Distance | — | 8 mm |
| Short-Circuit Protection | — | Short-circuit clamping |
| MSL 等級 | — | 2 (1 year floor life) |