1EDI60H12AHXUMA1 vs 1ED3122MC12HXUMA1 Perbandingan
Perbandingan bersamaan detil 1EDI60H12AHXUMA1 dari Infineon dan 1ED3122MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | 1EDI60H12AHXUMA1 | 1ED3122MC12HXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | Single-channel high-side gate driver IC | Isolated Gate Driver (single-channel) |
| Isolation Technology | Galvanic isolation via coreless transformer | Coreless Transformer (CT) |
| Isolation Voltage Rating | 1200 V | — |
| Number of Channels | 1 | 1 |
| Peak Source Current (typ.) | 10.0 A | — |
| Peak Sink Current (typ.) | 9.4 A | — |
| Konfigurasi Output | Separate source and sink (SEP) outputs | — |
| Input Compatibility | CMOS / TTL logic | — |
| Driven Device | IGBT (and MOSFET / SiC compatible) | — |
| Paket | PG-DSO-8-59 (DSO-8 with 8 mm creepage) | PG-DSO-8-66 (300-mil DSO-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Creepage Distance | 8 mm | — |
| Short-Circuit Protection | Short-circuit clamping | — |
| Level MSL | 2 (1 year floor life) | 2 |
| Status RoHS | Compliant | Compliant |
| Suhu Kerja | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] | -40 C to +125 C |
| Isolation Voltage (Vrms) | — | 5.7 kVrms |
| Maximum Transient Isolation (Vpk) | — | 8 kVpk |
| Output Current (source / sink) | — | 10 A / 9 A |
| Configuration | — | High-side, non-inverting |
| Supply Voltage (VCC / VBS) | — | 8 V to 35 V |
| Propagation Delay (typ.) | — | 30 ns |
| Rise Time / Fall Time (typ.) | — | 15 ns / 30 ns |
| Miller Clamp | — | Active (integrated) |
| Short-Circuit Clamping | — | Yes |
| UVLO | — | Primary and secondary side |