1EDI60H12AHXUMA1 vs 1ED3122MC12HXUMA1 比較

詳細並排比較 1EDI60H12AHXUMA1 由 Infineon 與 1ED3122MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3122MC12HXUMA1 1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 ✓ 啟用中

規格比較

參數 1EDI60H12AHXUMA1 1ED3122MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Single-channel high-side gate driver IC Isolated Gate Driver (single-channel)
Isolation Technology Galvanic isolation via coreless transformer Coreless Transformer (CT)
Isolation Voltage Rating 1200 V —
Number of Channels 1 1
Peak Source Current (typ.) 10.0 A —
Peak Sink Current (typ.) 9.4 A —
輸出配置 Separate source and sink (SEP) outputs —
Input Compatibility CMOS / TTL logic —
Driven Device IGBT (and MOSFET / SiC compatible) —
封裝 PG-DSO-8-59 (DSO-8 with 8 mm creepage) PG-DSO-8-66 (300-mil DSO-8)
安裝類型 Surface Mount Surface Mount
Creepage Distance 8 mm —
Short-Circuit Protection Short-circuit clamping —
MSL 等級 2 (1 year floor life) 2
RoHS 狀態 Compliant Compliant
工作溫度 -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] -40 C to +125 C
Isolation Voltage (Vrms) — 5.7 kVrms
Maximum Transient Isolation (Vpk) — 8 kVpk
Output Current (source / sink) — 10 A / 9 A
Configuration — High-side, non-inverting
Supply Voltage (VCC / VBS) — 8 V to 35 V
Propagation Delay (typ.) — 30 ns
Rise Time / Fall Time (typ.) — 15 ns / 30 ns
Miller Clamp — Active (integrated)
Short-Circuit Clamping — Yes
UVLO — Primary and secondary side

資料表與資源

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