1EDN7116GXTMA1 vs 1EDN7512GXTMA1 Perbandingan
Perbandingan bersamaan detil 1EDN7116GXTMA1 dari Infineon dan 1EDN7512GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 1EDN7116GXTMA1 | 1EDN7512GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Fungsi | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Low-side gate driver, single channel |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | 4 A |
| Peak Sink Current | 4 A (typ) | 8 A |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | [DATA_NEEDED: UVLO threshold] |
| Rentang Suhu Kerja | -40 °C to +125 °C | -40 C to +125 C |
| Paket | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-WSON-6-1 (6-pin WSON with exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL3 | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Jumlah Output | — | 1 |
| Logic Inputs | — | Inverting and Non-Inverting |
| Propagation Delay (typical) | — | 19 ns |
| Rentang Tegangan Masukan | — | [DATA_NEEDED: VCC range] |
| Input Robustness (negative) | — | -10 V |
| Waktu naik | — | [DATA_NEEDED: typical tr] |
| Waktu Menurun | — | [DATA_NEEDED: typical tf] |
| Lead-Free | — | Yes |