1EDN7116GXTMA1 vs 1EDN7512GXTMA1 比較
詳細並排比較 1EDN7116GXTMA1 由 Infineon 與 1EDN7512GXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 1EDN7116GXTMA1 | 1EDN7512GXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 功能 | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Low-side gate driver, single channel |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | 4 A |
| Peak Sink Current | 4 A (typ) | 8 A |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | [DATA_NEEDED: UVLO threshold] |
| 工作溫度範圍 | -40 °C to +125 °C | -40 C to +125 C |
| 封裝 | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-WSON-6-1 (6-pin WSON with exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL3 | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| 輸出數量 | — | 1 |
| Logic Inputs | — | Inverting and Non-Inverting |
| Propagation Delay (typical) | — | 19 ns |
| 輸入電壓範圍 | — | [DATA_NEEDED: VCC range] |
| Input Robustness (negative) | — | -10 V |
| 上升時間 | — | [DATA_NEEDED: typical tr] |
| 下降時間 | — | [DATA_NEEDED: typical tf] |
| Lead-Free | — | Yes |