1EDN7116GXTMA1 vs 1EDN7512GXTMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7116GXTMA1 disebabkan oleh Infineon dan 1EDN7512GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 1EDN7116GXTMA1 | 1EDN7512GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Fungsi | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Low-side gate driver, single channel |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | 4 A |
| Peak Sink Current | 4 A (typ) | 8 A |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | [DATA_NEEDED: UVLO threshold] |
| Gambaran Suhu Operasi | -40 °C to +125 °C | -40 C to +125 C |
| Kemasan | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-WSON-6-1 (6-pin WSON with exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL3 | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Bilangan Output | — | 1 |
| Logic Inputs | — | Inverting and Non-Inverting |
| Propagation Delay (typical) | — | 19 ns |
| Gambaran Tegangan Masukan | — | [DATA_NEEDED: VCC range] |
| Input Robustness (negative) | — | -10 V |
| Masa Pertambahan | — | [DATA_NEEDED: typical tr] |
| Masa jatuh | — | [DATA_NEEDED: typical tf] |
| Lead-Free | — | Yes |