1EDN7126GXTMA1 vs 1ED44173N01BXTSA1 Perbandingan

Perbandingan bersamaan detil 1EDN7126GXTMA1 dari Infineon dan 1ED44173N01BXTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7126GXTMA1 1ED44173N01BXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting Non-Inverting
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A —
Peak Sink Current 1.5 A —
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Rentang Suhu Kerja -40C to +125C —
Paket PG-VSON-10-4 PG-SOT23-6-3 (6-pin)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Product Type — Low-Side MOSFET Gate Driver
Number of Channels — 1
Supply Voltage (VCC) — 4.5 V to 25 V
Output Current (Source) — 2.6 A typical
Output Current (Sink) — 2.6 A typical
Waktu naik — [DATA_NEEDED: rise time]
Waktu Menurun — [DATA_NEEDED: fall time]
Propagation Delay — < 100 ns typical
Arus Memerintah — 0.4 mA typical
Over-Current Protection — Yes (integrated, 4.5 V to 25 V threshold)
Fault Reporting — Yes (open-drain FAULT pin)
Tombol Aktifkan — Yes
Under-Voltage Lockout (UVLO) — Yes
Suhu Kerja — -40 C to +125 C

Spek dan Sumber

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