1EDN7126GXTMA1 vs 1ED44173N01BXTSA1 比較

詳細並排比較 1EDN7126GXTMA1 由 Infineon 與 1ED44173N01BXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED44173N01BXTSA1 1ED44173N01BXTSA1 - 25V 2.6A Low-Side Gate Driver | Infineon

1ED44173N01BXTSA1 - 25V 2.6A Low-Side Gate Driver | Infineon

1ED44173N01BXTSA1 ✓ 啟用中

規格比較

參數 1EDN7126GXTMA1 1ED44173N01BXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting Non-Inverting
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A —
Peak Sink Current 1.5 A —
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
工作溫度範圍 -40C to +125C —
封裝 PG-VSON-10-4 PG-SOT23-6-3 (6-pin)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Product Type — Low-Side MOSFET Gate Driver
Number of Channels — 1
Supply Voltage (VCC) — 4.5 V to 25 V
Output Current (Source) — 2.6 A typical
Output Current (Sink) — 2.6 A typical
上升時間 — [DATA_NEEDED: rise time]
下降時間 — [DATA_NEEDED: fall time]
Propagation Delay — < 100 ns typical
靜態電流 — 0.4 mA typical
Over-Current Protection — Yes (integrated, 4.5 V to 25 V threshold)
Fault Reporting — Yes (open-drain FAULT pin)
致能腳位 — Yes
Under-Voltage Lockout (UVLO) — Yes
工作溫度 — -40 C to +125 C

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