1EDN7126GXTMA1 vs TLF11251LDXUMA1 Perbandingan

Perbandingan bersamaan detil 1EDN7126GXTMA1 dari Infineon dan TLF11251LDXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7126GXTMA1 TLF11251LDXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel TDI gate driver for GaN HEMT and Si MOSFET Half-Bridge Gate Driver
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A —
Peak Sink Current 1.5 A —
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
Rentang Suhu Kerja -40C to +125C —
Paket PG-VSON-10-4 PG-TSON-10-2 (10-pin TSON with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) CMOS / TTL (non-inverting)
Konfigurasi Output — Half-Bridge (1 high-side + 1 low-side)
Tipe Output — Non-Inverting
Peak Output Current — 2.5 A (source/sink)
Waktu naik — 60 ns (typical)
Waktu Menurun — 60 ns (typical)
Supply Voltage Range — 3.5 V to 7 V
Number of Drivers — 1 (half-bridge)
Suhu Kerja — -40 C to +125 C (AEC-Q100 Grade 1)
Automotive Qualification — AEC-Q100
Protection Features — Shoot-through protection, UVLO

Spek dan Sumber

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