1EDN7126GXTMA1 vs TLF11251LDXUMA1 比較

詳細並排比較 1EDN7126GXTMA1 由 Infineon 與 TLF11251LDXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1EDN7126GXTMA1 TLF11251LDXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel TDI gate driver for GaN HEMT and Si MOSFET Half-Bridge Gate Driver
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A —
Peak Sink Current 1.5 A —
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
工作溫度範圍 -40C to +125C —
封裝 PG-VSON-10-4 PG-TSON-10-2 (10-pin TSON with exposed pad)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS 狀態 Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) CMOS / TTL (non-inverting)
輸出配置 — Half-Bridge (1 high-side + 1 low-side)
輸出類型 — Non-Inverting
Peak Output Current — 2.5 A (source/sink)
上升時間 — 60 ns (typical)
下降時間 — 60 ns (typical)
Supply Voltage Range — 3.5 V to 7 V
Number of Drivers — 1 (half-bridge)
工作溫度 — -40 C to +125 C (AEC-Q100 Grade 1)
Automotive Qualification — AEC-Q100
Protection Features — Shoot-through protection, UVLO

資料表與資源

瀏覽所有產品 建立 BOM 索取報價