1EDN7511BXUSA1 vs 2EDN7533RXTMA1 Perbandingan

Perbandingan bersamaan detil 1EDN7511BXUSA1 dari Infineon dan 2EDN7533RXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7511BXUSA1 2EDN7533RXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Low-Side, Single Channel —
Number of Drivers 1 —
Jumlah Output 1 —
Configuration Inverting, Non-Inverting —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Waktu naik [DATA_NEEDED: rise time ns] —
Waktu Menurun 4.5 ns —
Propagation Delay ±5 ns (matched) —
Tegangan Pemuat Kerja [DATA_NEEDED: VCC range V] —
Input Logic Compatibility TTL / CMOS LV-TTL
UVLO Protection Yes (integrated) —
Output Stage True low-impedance complementary rail-to-rail —
Rentang Suhu Kerja -40 C to +150 C —
Paket PG-SOT23-6-2 (6-pin SOT-23) PG-TSSOP-8 (HTSSOP) with exposed pad
Tipe Mounting Surface Mount (SMD/SMT) Surface Mount
Packaging Cut Tape (Tape & Reel available) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Fungsi — Dual-channel low-side gate driver
Number of Channels — 2
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Propagation Delay (typ.) — 19 ns
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
Suhu Hubung Kerja — -40 C to +150 C

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