1EDN7511BXUSA1 vs 2EDN7533RXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7511BXUSA1 disebabkan oleh Infineon dan 2EDN7533RXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7511BXUSA1 2EDN7533RXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Low-Side, Single Channel —
Number of Drivers 1 —
Bilangan Output 1 —
Configuration Inverting, Non-Inverting —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Masa Pertambahan [DATA_NEEDED: rise time ns] —
Masa jatuh 4.5 ns —
Propagation Delay ±5 ns (matched) —
Tegangan Pemberi Arus Operasi [DATA_NEEDED: VCC range V] —
Input Logic Compatibility TTL / CMOS LV-TTL
UVLO Protection Yes (integrated) —
Output Stage True low-impedance complementary rail-to-rail —
Gambaran Suhu Operasi -40 C to +150 C —
Kemasan PG-SOT23-6-2 (6-pin SOT-23) PG-TSSOP-8 (HTSSOP) with exposed pad
Jenis Pemasangan Surface Mount (SMD/SMT) Surface Mount
Packaging Cut Tape (Tape & Reel available) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Fungsi — Dual-channel low-side gate driver
Number of Channels — 2
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Propagation Delay (typ.) — 19 ns
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
Suhu Hubungan Operasi — -40 C to +150 C

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