1N5711 vs 1N6263 Perbandingan

Perbandingan bersamaan detil 1N5711 dari STMicroelectronics dan 1N6263 dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1N5711 1N6263
Merek STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small-signal Schottky barrier (RF) diode Small Signal Schottky (metal-to-silicon junction)
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW 400 mW
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) [DATA_NEEDED: forward voltage]
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF —
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Paket DO-35 (DO-204AH) hermetic axial-lead glass DO-35 (axial, through-hole glass)
Tipe Mounting Through-Hole Through Hole
Suhu Kerja [DATA_NEEDED: operating temperature range] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Repetitive Peak Reverse Voltage (VRRM) — 60 V
Average Forward Current (IF) — 15 mA
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Junction Capacitance — [DATA_NEEDED: junction capacitance]
Reverse Recovery Time — Ultrafast (no stored charge, barrier-limited)
Surge Current Rating (IFSM) — [DATA_NEEDED: surge current]
Technology — Guard-ring Schottky barrier
Application Focus — UHF/VHF detection, pulse applications, broad dynamic range
Number of Elements — 1
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]

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