1N5711 vs 1N6263 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1N5711 disebabkan oleh STMicroelectronics dan 1N6263 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1N5711 1N6263
Merek STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small-signal Schottky barrier (RF) diode Small Signal Schottky (metal-to-silicon junction)
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW 400 mW
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) [DATA_NEEDED: forward voltage]
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF —
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Kemasan DO-35 (DO-204AH) hermetic axial-lead glass DO-35 (axial, through-hole glass)
Jenis Pemasangan Through-Hole Through Hole
Suhu Operasi [DATA_NEEDED: operating temperature range] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Repetitive Peak Reverse Voltage (VRRM) — 60 V
Average Forward Current (IF) — 15 mA
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Junction Capacitance — [DATA_NEEDED: junction capacitance]
Reverse Recovery Time — Ultrafast (no stored charge, barrier-limited)
Surge Current Rating (IFSM) — [DATA_NEEDED: surge current]
Technology — Guard-ring Schottky barrier
Application Focus — UHF/VHF detection, pulse applications, broad dynamic range
Number of Elements — 1
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]

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