1N5711 vs 1N6263 مقایسه
مقایسه دقیق کنار به کنار 1N5711 توسط STMicroelectronics و 1N6263 توسط STMicroelectronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | 1N5711 | 1N6263 |
|---|---|---|
| برند | STMicroelectronics | STMicroelectronics |
| دسته‌بندی | Diodes | Diodes |
| وضعیت چرخه عمر | فعال | فعال |
| Diode Type | Small-signal Schottky barrier (RF) diode | Small Signal Schottky (metal-to-silicon junction) |
| Peak Reverse Voltage (VRRM) | 70 V | — |
| Continuous Forward Current (IF) | 15 mA | — |
| Power Dissipation | 430 mW | 400 mW |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) | [DATA_NEEDED: forward voltage] |
| Total Capacitance | 2 pF | — |
| Junction Capacitance (Cj) | 1 pF | — |
| Dynamic Resistance | 35 ohm | — |
| Breakdown Voltage (VB) | 70 V | — |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) | — |
| Junction Structure | Metal-to-silicon junction with PN guard ring | — |
| بسته‌بندی | DO-35 (DO-204AH) hermetic axial-lead glass | DO-35 (axial, through-hole glass) |
| نوع نصب | Through-Hole | Through Hole |
| دمای کاری | [DATA_NEEDED: operating temperature range] | — |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current at rated VR] | — |
| وضعیت RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Repetitive Peak Reverse Voltage (VRRM) | — | 60 V |
| Average Forward Current (IF) | — | 15 mA |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Junction Capacitance | — | [DATA_NEEDED: junction capacitance] |
| Reverse Recovery Time | — | Ultrafast (no stored charge, barrier-limited) |
| Surge Current Rating (IFSM) | — | [DATA_NEEDED: surge current] |
| Technology | — | Guard-ring Schottky barrier |
| Application Focus | — | UHF/VHF detection, pulse applications, broad dynamic range |
| Number of Elements | — | 1 |
| محدوده دمای کاری | — | [DATA_NEEDED: operating temperature range] |