1N5711 vs 1N6263 Karşılaştırma

Ayrıntılı yan yana karşılaştırma 1N5711 tarafından STMicroelectronics ve 1N6263 tarafından STMicroelectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre 1N5711 1N6263
Marka STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Yaşam Döngüsü Durumu Aktif Aktif
Diode Type Small-signal Schottky barrier (RF) diode Small Signal Schottky (metal-to-silicon junction)
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW 400 mW
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) [DATA_NEEDED: forward voltage]
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF —
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Paket DO-35 (DO-204AH) hermetic axial-lead glass DO-35 (axial, through-hole glass)
Montaj Türü Through-Hole Through Hole
İşletim Sıcaklığı [DATA_NEEDED: operating temperature range] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] —
RoHS Durumu Compliant [DATA_NEEDED: RoHS status]
Repetitive Peak Reverse Voltage (VRRM) — 60 V
Average Forward Current (IF) — 15 mA
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Junction Capacitance — [DATA_NEEDED: junction capacitance]
Reverse Recovery Time — Ultrafast (no stored charge, barrier-limited)
Surge Current Rating (IFSM) — [DATA_NEEDED: surge current]
Technology — Guard-ring Schottky barrier
Application Focus — UHF/VHF detection, pulse applications, broad dynamic range
Number of Elements — 1
İşletim Sıcaklığı Aralığı — [DATA_NEEDED: operating temperature range]

Dökümanlar & Kaynaklar

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