2ED2183S06FXUMA1 vs 2ED2108S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED2183S06FXUMA1 dari Infineon dan 2ED2108S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2183S06FXUMA1 2ED2108S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge Gate Driver —
Number of Drivers 1 1
Jumlah Output 1 (half-bridge: high-side + low-side) 2 (high-side + low-side)
Configuration High Side, Low Side, Non-Inverting —
Maximum Offset Voltage 650 V —
Output Current (Sink/Source) 2.5 A typical —
Waktu naik 15 ns —
Waktu Menurun 15 ns —
Supply Voltage (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V (typ.) —
Logic Input Voltage 3.3 V / 5 V compatible (HIN, LIN) —
Input Type Non-Inverting —
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) VCC and VBS Yes (VCC and VB)
Suhu Kerja -40 C to +125 C -40 C to +125 C
Paket PG-DSO-8-53 (DSO-8) PG-DSO-8-53 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 2 1
Terminal Finish Tin (e3 per JESD-609) —
Technology SOI (Silicon-On-Insulator) —
Status RoHS Compliant Compliant
Driver Configuration — Half-Bridge
Gate Type — N-Channel MOSFET, IGBT
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Integrated Bootstrap Diode — Yes
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay ns]
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]

Spek dan Sumber

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