2ED2183S06FXUMA1 vs 2ED2108S06FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED2183S06FXUMA1 disebabkan oleh Infineon dan 2ED2108S06FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED2183S06FXUMA1 2ED2108S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Half-Bridge Gate Driver —
Number of Drivers 1 1
Bilangan Output 1 (half-bridge: high-side + low-side) 2 (high-side + low-side)
Configuration High Side, Low Side, Non-Inverting —
Maximum Offset Voltage 650 V —
Output Current (Sink/Source) 2.5 A typical —
Masa Pertambahan 15 ns —
Masa jatuh 15 ns —
Supply Voltage (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V (typ.) —
Logic Input Voltage 3.3 V / 5 V compatible (HIN, LIN) —
Input Type Non-Inverting —
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) VCC and VBS Yes (VCC and VB)
Suhu Operasi -40 C to +125 C -40 C to +125 C
Kemasan PG-DSO-8-53 (DSO-8) PG-DSO-8-53 (DSO-8)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 2 1
Terminal Finish Tin (e3 per JESD-609) —
Technology SOI (Silicon-On-Insulator) —
Status RoHS Compliant Compliant
Driver Configuration — Half-Bridge
Gate Type — N-Channel MOSFET, IGBT
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Integrated Bootstrap Diode — Yes
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay ns]
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]

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