2ED2183S06FXUMA1 vs 2ED2108S06FXUMA1 比較

詳細並排比較 2ED2183S06FXUMA1 由 Infineon 與 2ED2108S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2183S06FXUMA1 2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 ✓ 啟用中
Infineon
2ED2108S06FXUMA1 2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED2108S06FXUMA1 ✓ 啟用中

規格比較

參數 2ED2183S06FXUMA1 2ED2108S06FXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Half-Bridge Gate Driver —
Number of Drivers 1 1
輸出數量 1 (half-bridge: high-side + low-side) 2 (high-side + low-side)
Configuration High Side, Low Side, Non-Inverting —
Maximum Offset Voltage 650 V —
Output Current (Sink/Source) 2.5 A typical —
上升時間 15 ns —
下降時間 15 ns —
Supply Voltage (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V (typ.) —
Logic Input Voltage 3.3 V / 5 V compatible (HIN, LIN) —
Input Type Non-Inverting —
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) VCC and VBS Yes (VCC and VB)
工作溫度 -40 C to +125 C -40 C to +125 C
封裝 PG-DSO-8-53 (DSO-8) PG-DSO-8-53 (DSO-8)
安裝類型 Surface Mount Surface Mount
MSL 等級 2 1
Terminal Finish Tin (e3 per JESD-609) —
Technology SOI (Silicon-On-Insulator) —
RoHS 狀態 Compliant Compliant
Driver Configuration — Half-Bridge
Gate Type — N-Channel MOSFET, IGBT
Logic Input — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V
High-Side Bootstrap Voltage Rating — 650 V
Peak Source Current (typ.) — 0.29 A
Peak Sink Current (typ.) — 0.7 A
Integrated Bootstrap Diode — Yes
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay ns]
Rise / Fall Time (typ.) — [DATA_NEEDED: tr/tf ns]

資料表與資源

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