6EDL04I065NRXUMA1 vs IDL04G65C5XUMA2 Perbandingan
Perbandingan bersamaan detil 6EDL04I065NRXUMA1 dari Infineon dan IDL04G65C5XUMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 6EDL04I065NRXUMA1 | IDL04G65C5XUMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Diodes |
| Status Lingkungan Hidup | Aktif | Aktif |
| Topologi | 3-phase gate driver (6 channels) | — |
| Konfigurasi Output | Non-inverting half-bridge drivers | — |
| Maximum Blocking Voltage | 650 V | — |
| Number of Channels | 6 | — |
| Driver Type | IGBT / MOSFET gate driver | — |
| Technology | Infineon thin-film SOI | — |
| Integrated Bootstrap Diode (BSD) | Yes | — |
| Over Current Protection (OCP) | Yes | — |
| Enable Input (EN) | Yes | — |
| Fault Output | Yes | — |
| Paket | PG-TSSOP-25 | PG-VSON-4 (DPAK real2pin) Surface Mount |
| Tipe Mounting | Surface Mount | Surface Mount, Tape & Reel |
| Family | 6EDL04x065xR | — |
| Status RoHS | Compliant | — |
| Datasheet Document | Infineon 6EDL04 family datasheet (see datasheet_url) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolSiC™ Schottky Diode Generation 5 |
| Diode Type | — | Silicon Carbide (SiC) Schottky |
| Repetitive Peak Reverse Voltage (V_RRM) | — | 650 V |
| Continuous Forward Current (I_F(AV)) | — | 4 A |
| Total Capacitive Charge (Q_C) | — | 7 nC (typical) |
| Forward Voltage (V_F) | — | 1.7 V at 4 A (typical, per datasheet) |
| Reverse Leakage Current (I_R) | — | 70 µA at 650 V |
| Junction Capacitance (C_J) | — | 130 pF at 1 V, 1 MHz |
| Reverse Recovery Time (t_rr) | — | 0 ns (Schottky, no minority-carrier storage) |
| Suhu Hubung Kerja | — | -55°C to +175°C |
| Jumlah Pin | — | 4 (with exposed thermal pad) |
| RoHS / REACH | — | RoHS Compliant (per Infineon product page) |