6EDL04I065NRXUMA1 vs IDL04G65C5XUMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 6EDL04I065NRXUMA1 disebabkan oleh Infineon dan IDL04G65C5XUMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 6EDL04I065NRXUMA1 | IDL04G65C5XUMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Diodes |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tetstruktur | 3-phase gate driver (6 channels) | — |
| Konfigurasi Output | Non-inverting half-bridge drivers | — |
| Maximum Blocking Voltage | 650 V | — |
| Number of Channels | 6 | — |
| Driver Type | IGBT / MOSFET gate driver | — |
| Technology | Infineon thin-film SOI | — |
| Integrated Bootstrap Diode (BSD) | Yes | — |
| Over Current Protection (OCP) | Yes | — |
| Enable Input (EN) | Yes | — |
| Fault Output | Yes | — |
| Kemasan | PG-TSSOP-25 | PG-VSON-4 (DPAK real2pin) Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount, Tape & Reel |
| Family | 6EDL04x065xR | — |
| Status RoHS | Compliant | — |
| Datasheet Document | Infineon 6EDL04 family datasheet (see datasheet_url) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolSiC™ Schottky Diode Generation 5 |
| Diode Type | — | Silicon Carbide (SiC) Schottky |
| Repetitive Peak Reverse Voltage (V_RRM) | — | 650 V |
| Continuous Forward Current (I_F(AV)) | — | 4 A |
| Total Capacitive Charge (Q_C) | — | 7 nC (typical) |
| Forward Voltage (V_F) | — | 1.7 V at 4 A (typical, per datasheet) |
| Reverse Leakage Current (I_R) | — | 70 µA at 650 V |
| Junction Capacitance (C_J) | — | 130 pF at 1 V, 1 MHz |
| Reverse Recovery Time (t_rr) | — | 0 ns (Schottky, no minority-carrier storage) |
| Suhu Hubungan Operasi | — | -55°C to +175°C |
| Kiraan Pin | — | 4 (with exposed thermal pad) |
| RoHS / REACH | — | RoHS Compliant (per Infineon product page) |