BSC027N10NS5ATMA1 vs BSC033N08NS5SCATMA1 Perbandingan

Perbandingan bersamaan detil BSC027N10NS5ATMA1 dari Infineon dan BSC033N08NS5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC033N08NS5SCATMA1 BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC027N10NS5ATMA1 BSC033N08NS5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup NRND Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC027N10NS5ATMA1 —
Technology OptiMOS 5 (100V) Trench (OptiMOS 5)
Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 80 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at Ta 23 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 194 A —
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 214 W 136 W
Paket PG-TSON-8-3 (SuperSO8 5x6 mm) PG-WSON-8-2 (SuperSO8 DSC)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] -55C to +175C
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] 1
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) —
Series — OptiMOS 5
FET Type — N-Channel
Continuous Drain Current (Tc) — 144 A
RDS(on) max @ VGS=10V — 3.3 mOhm
Gate-Source Voltage (VGS) — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Thermal Resistance RthJC — 0.86 K/W
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]

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