BSC027N10NS5ATMA1 vs BSC033N08NS5SCATMA1 比較

詳細並排比較 BSC027N10NS5ATMA1 由 Infineon 與 BSC033N08NS5SCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC033N08NS5SCATMA1 BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 ✓ 啟用中

規格比較

參數 BSC027N10NS5ATMA1 BSC033N08NS5SCATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 NRND 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC027N10NS5ATMA1 —
Technology OptiMOS 5 (100V) Trench (OptiMOS 5)
Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 80 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at Ta 23 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 194 A —
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 214 W 136 W
封裝 PG-TSON-8-3 (SuperSO8 5x6 mm) PG-WSON-8-2 (SuperSO8 DSC)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: Tj min/max] -55C to +175C
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL rating] 1
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) —
Series — OptiMOS 5
FET Type — N-Channel
Continuous Drain Current (Tc) — 144 A
RDS(on) max @ VGS=10V — 3.3 mOhm
Gate-Source Voltage (VGS) — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Thermal Resistance RthJC — 0.86 K/W
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]

資料表與資源

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