BSC060P03NS3EGATMA1 vs IRF5305STRRPBF Perbandingan
Perbandingan bersamaan detil BSC060P03NS3EGATMA1 dari Infineon dan IRF5305STRRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSC060P03NS3EGATMA1 | IRF5305STRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (Ta) | 17.7 A | — |
| Continuous Drain Current (Tc) | 100 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 6 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | -2.5 V | — |
| Total Gate Charge Qg @ VGS=10V | 81 nC | — |
| Input Capacitance Ciss | 6.02 nF | — |
| Output Capacitance Coss | 2.81 nF | — |
| Reverse Transfer Capacitance Crss | 220 pF | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 83 W | — |
| Rentang Suhu Kerja | -55°C to +150°C | — |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6) | D2PAK (TO-263) Surface Mount |
| Technology | OptiMOS™ P-channel Trench | HEXFET (Advanced Process) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Tipe Transistor | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max @ VGS=-10V | — | 60 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Power Dissipation (TC) | — | 110 W |
| Power Dissipation (TA) | — | 3.8 W |
| Suhu Hubung Kerja | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |
| Packaging | — | Tape & Reel (TR) |