BSC060P03NS3EGATMA1 vs IRF5305STRRPBF 比較
詳細並排比較 BSC060P03NS3EGATMA1 由 Infineon 與 IRF5305STRRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 ✓ 啟用中
規格比較
| 參數 | BSC060P03NS3EGATMA1 | IRF5305STRRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (Ta) | 17.7 A | — |
| Continuous Drain Current (Tc) | 100 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 6 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | -2.5 V | — |
| Total Gate Charge Qg @ VGS=10V | 81 nC | — |
| Input Capacitance Ciss | 6.02 nF | — |
| Output Capacitance Coss | 2.81 nF | — |
| Reverse Transfer Capacitance Crss | 220 pF | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 83 W | — |
| 工作溫度範圍 | -55°C to +150°C | — |
| 封裝 | PG-TDSON-8-1 (SuperSO8 5x6) | D2PAK (TO-263) Surface Mount |
| Technology | OptiMOS™ P-channel Trench | HEXFET (Advanced Process) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | — |
| 電晶體類型 | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max @ VGS=-10V | — | 60 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Power Dissipation (TC) | — | 110 W |
| Power Dissipation (TA) | — | 3.8 W |
| 工作接面溫度 | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |
| Packaging | — | Tape & Reel (TR) |