BSC076N04NDATMA1 vs BSZ068N06NSATMA1 Perbandingan
Perbandingan bersamaan detil BSC076N04NDATMA1 dari Infineon dan BSZ068N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSZ068N06NSATMA1 - 60V, 6.8mΩ N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC076N04NDATMA1 | BSZ068N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel (independent MOSFETs) | — |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | — |
| On-Resistance RDS(on) max | 7.6 mOhm | 6.8 mΩ @ VGS=10 V |
| Power Dissipation (Ta) | 2.3 W | 2.1 W |
| Power Dissipation (Tc) | 65 W | 46 W |
| Technology | Trench MOSFET (OptiMOS 3) | OptiMOS 5 (trench-gate) |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket / Case | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID at Ta] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typ] |
| Rentang Suhu Kerja | — | -55 °C to +150 °C |
| Paket | — | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Level MSL | — | MSL1 |
| RoHS / Halogen-Free | — | RoHS compliant, halogen-free |