BSC076N04NDATMA1 vs BSZ068N06NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC076N04NDATMA1 disebabkan oleh Infineon dan BSZ068N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSZ068N06NSATMA1 - 60V, 6.8mΩ N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC076N04NDATMA1 | BSZ068N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel (independent MOSFETs) | — |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | — |
| On-Resistance RDS(on) max | 7.6 mOhm | 6.8 mΩ @ VGS=10 V |
| Power Dissipation (Ta) | 2.3 W | 2.1 W |
| Power Dissipation (Tc) | 65 W | 46 W |
| Technology | Trench MOSFET (OptiMOS 3) | OptiMOS 5 (trench-gate) |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan / Case | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID at Ta] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typ] |
| Gambaran Suhu Operasi | — | -55 °C to +150 °C |
| Kemasan | — | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Aras MSL | — | MSL1 |
| RoHS / Halogen-Free | — | RoHS compliant, halogen-free |