BSC076N04NDATMA1 vs BSZ068N06NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC076N04NDATMA1 sa pamamagitan ng Infineon at BSZ068N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC076N04NDATMA1 BSZ068N06NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
Configuration Dual N-Channel (independent MOSFETs) —
Drain-Source Voltage (VDS) max 40 V —
Continuous Drain Current (ID) 20 A (Tc) —
Gate Threshold Voltage (VGS(th)) 4 V (max, typical) —
On-Resistance RDS(on) max 7.6 mOhm 6.8 mΩ @ VGS=10 V
Power Dissipation (Ta) 2.3 W 2.1 W
Power Dissipation (Tc) 65 W 46 W
Technology Trench MOSFET (OptiMOS 3) OptiMOS 5 (trench-gate)
Qgd/Qgs Ratio < 0.8 (high shot-through immunity) —
Temperature ng Junction na Operasyon -55 C to +175 C —
Packhaging / Kaso PG-TDSON-8-4 (SuperSO8, 5x6 mm) —
Uri ng Pagpapasok Surface Mount Surface Mount
RoHS / Pb-Free Compliant (Pb-free plating) —
FET Type 2x N-Channel MOSFET array N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — [DATA_NEEDED: ID at Ta]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg typ]
Hanay ng Temperature na Operasyon — -55 °C to +150 °C
Packhaging — PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Level ng MSL — MSL1
RoHS / Halogen-Free — RoHS compliant, halogen-free

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