BSC076N06NS3GATMA1 vs IPD034N06N3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC076N06NS3GATMA1 dari Infineon dan IPD034N06N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC076N06NS3GATMA1 IPD034N06N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET N-Channel Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
Rentang Suhu Kerja -55C to +150C [DATA_NEEDED: Tj min/max]
Paket PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS Compliance Compliant —
Bebas Halogen Yes (per Infineon product page) —
Series — OptiMOS 3
Continuous Drain Current (ID) at Tc — 100 A
Maximum Power Dissipation (Ptot) — 167 W
Gate Threshold Voltage VGS(th) — 4 V at 93 uA
Pin Configuration — 3-Pin (2 + Tab)
Status RoHS — Compliant (Pb-free green finish)
Automotive Qualified — Yes (per Infineon product page)

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