BSC076N06NS3GATMA1 vs IPD034N06N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC076N06NS3GATMA1 disebabkan oleh Infineon dan IPD034N06N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC076N06NS3GATMA1 IPD034N06N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET N-Channel Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
Gambaran Suhu Operasi -55C to +150C [DATA_NEEDED: Tj min/max]
Kemasan PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS Compliance Compliant —
Boson Bebas Yes (per Infineon product page) —
Series — OptiMOS 3
Continuous Drain Current (ID) at Tc — 100 A
Maximum Power Dissipation (Ptot) — 167 W
Gate Threshold Voltage VGS(th) — 4 V at 93 uA
Pin Configuration — 3-Pin (2 + Tab)
Status RoHS — Compliant (Pb-free green finish)
Automotive Qualified — Yes (per Infineon product page)

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