BSC076N06NS3GATMA1 vs IPD034N06N3GATMA1 比較

詳細並排比較 BSC076N06NS3GATMA1 由 Infineon 與 IPD034N06N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 ✓ 啟用中
Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ 啟用中

規格比較

參數 BSC076N06NS3GATMA1 IPD034N06N3GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET N-Channel Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
工作溫度範圍 -55C to +150C [DATA_NEEDED: Tj min/max]
封裝 PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TO252-3 (DPAK)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS Compliance Compliant —
無鹵素 Yes (per Infineon product page) —
Series — OptiMOS 3
Continuous Drain Current (ID) at Tc — 100 A
Maximum Power Dissipation (Ptot) — 167 W
Gate Threshold Voltage VGS(th) — 4 V at 93 uA
Pin Configuration — 3-Pin (2 + Tab)
RoHS 狀態 — Compliant (Pb-free green finish)
Automotive Qualified — Yes (per Infineon product page)

資料表與資源

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