BSC100N10NSFGATMA1 vs BSC093N15NS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC100N10NSFGATMA1 dari Infineon dan BSC093N15NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSC100N10NSFGATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 150V |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID), Ta | 11.4 A | — |
| Continuous Drain Current (ID), Tc | 90 A | — |
| Power Dissipation (PD), Tc | 156 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical] |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6) | SuperSO8 5x6 (PG-TDSON-8-7) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (junction) | [DATA_NEEDED: operating temperature range] |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at TC | — | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | — | 9.3 mΩ |
| Power Dissipation (PD) at TC | — | 139 W |
| Gate Drive Voltage (VGS) Recommended | — | 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Level MSL | — | [DATA_NEEDED: MSL level] |
| Bebas Halogen | — | [DATA_NEEDED: halogen free status] |