BSC100N10NSFGATMA1 vs BSC093N15NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC100N10NSFGATMA1 sa pamamagitan ng Infineon at BSC093N15NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC100N10NSFGATMA1 BSC093N15NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 5 150V
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID), Ta 11.4 A —
Continuous Drain Current (ID), Tc 90 A —
Power Dissipation (PD), Tc 156 W —
Drain-Source On-Resistance (RDS(on)) max 10 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical]
Packhaging PG-TDSON-8-1 (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-7)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C (junction) [DATA_NEEDED: operating temperature range]
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) —
Tindminan RoHS Compliant Compliant
Drain-Source Voltage (VDS) Max — 150 V
Continuous Drain Current (ID) at TC — 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V — 9.3 mΩ
Power Dissipation (PD) at TC — 139 W
Gate Drive Voltage (VGS) Recommended — 10 V
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Level ng MSL — [DATA_NEEDED: MSL level]
Wala sa Halogen — [DATA_NEEDED: halogen free status]

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