BSC190N12NS3GATMA1 vs BSZ0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC190N12NS3GATMA1 dari Infineon dan BSZ0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC190N12NS3GATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC190N12NS3GATMA1 BSZ0901NSIATMA1
Technology OptiMOS 3 (N-Channel Trench) OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) 120 V 30 V
Continuous Drain Current (ID) at Ta=25C 8.6 A 25 A
Continuous Drain Current (ID) at Tc 44 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: total gate charge Qg]
Power Dissipation (PD) at Tc 69 W —
Rentang Suhu Kerja -55C to +150C -55 C to +150 C (typical MOSFET range)
Paket PG-TDSON-8-1 (SuperSO8 5x6) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Avalanche Rated Yes (UIS-tested) —
Body Diode Integrated —
Status RoHS Compliant (JESD-609 Code e3) Compliant
Level MSL 1 (per JEDEC J-STD-020) —
Configuration Single with built-in diode —
Series — OptiMOS 25V
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Jumlah Pin — 8
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon