BSC190N12NS3GATMA1 vs BSZ0901NSIATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC190N12NS3GATMA1 tarafından Infineon ve BSZ0901NSIATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N12NS3GATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSC190N12NS3GATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC190N12NS3GATMA1 | BSZ0901NSIATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench) | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 8.6 A | 25 A |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at Tc | 69 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (UIS-tested) | — |
| Body Diode | Integrated | — |
| RoHS Durumu | Compliant (JESD-609 Code e3) | Compliant |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single with built-in diode | — |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Pin Sayısı | — | 8 |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |