BSC190N12NS3GATMA1 vs BSZ0901NSIATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC190N12NS3GATMA1 disebabkan oleh Infineon dan BSZ0901NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N12NS3GATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC190N12NS3GATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC190N12NS3GATMA1 | BSZ0901NSIATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench) | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 8.6 A | 25 A |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at Tc | 69 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (UIS-tested) | — |
| Body Diode | Integrated | — |
| Status RoHS | Compliant (JESD-609 Code e3) | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single with built-in diode | — |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Kiraan Pin | — | 8 |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |