BSC190N15NS3G vs BSC190N15NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC190N15NS3G dari Infineon dan BSC190N15NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC190N15NS3G BSC190N15NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Manufacturer Infineon Technologies —
Technology OptiMOS 3 (trench-gate) OptiMOS 3 (N-Channel)
Drain-Source Voltage (V_DS max) 150 V —
Continuous Drain Current (I_D, Tc) 50 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (V_GS max) +/-20 V —
Gate Threshold Voltage (V_GS(th) typ) [DATA_NEEDED: gate threshold voltage] —
Static Drain-Source R_DS(on) max @ 10 V 19 mOhm —
Static Drain-Source R_DS(on) typ @ 10 V [DATA_NEEDED: typical R_DS(on) at 10 V] —
Total Power Dissipation (P_D, Tc=25C) 125 W —
Suhu Hubung Kerja -55C to +150C —
Paket SuperSO8 5x6 / PG-TDSON-8-1 PG-TDSON-8-1 (TDSON-8 EP)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes (per Infineon product page) —
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL rating] —
Jumlah Pin 8 —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — 20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V
On-Resistance RDS(on) max at VGS=10V — 19 mOhm
On-Resistance RDS(on) typ at VGS=10V — [DATA_NEEDED: RDS(on) typical at 10V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Tc=25C — 125 W
Rentang Suhu Kerja — -55 C to +150 C
Status RoHS — Compliant
Level MSL — 1

Spek dan Sumber

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