BSC190N15NS3G vs BSC190N15NS3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC190N15NS3G disebabkan oleh Infineon dan BSC190N15NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC190N15NS3G | BSC190N15NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 3 (trench-gate) | OptiMOS 3 (N-Channel) |
| Drain-Source Voltage (V_DS max) | 150 V | — |
| Continuous Drain Current (I_D, Tc) | 50 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (V_GS max) | +/-20 V | — |
| Gate Threshold Voltage (V_GS(th) typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Static Drain-Source R_DS(on) max @ 10 V | 19 mOhm | — |
| Static Drain-Source R_DS(on) typ @ 10 V | [DATA_NEEDED: typical R_DS(on) at 10 V] | — |
| Total Power Dissipation (P_D, Tc=25C) | 125 W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | SuperSO8 5x6 / PG-TDSON-8-1 | PG-TDSON-8-1 (TDSON-8 EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL rating] | — |
| Kiraan Pin | 8 | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V |
| On-Resistance RDS(on) max at VGS=10V | — | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical at 10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| Gambaran Suhu Operasi | — | -55 C to +150 C |
| Status RoHS | — | Compliant |
| Aras MSL | — | 1 |