BSC190N15NS3G vs BSC190N15NS3GATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC190N15NS3G tarafından Infineon ve BSC190N15NS3GATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSC190N15NS3G | BSC190N15NS3GATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 3 (trench-gate) | OptiMOS 3 (N-Channel) |
| Drain-Source Voltage (V_DS max) | 150 V | — |
| Continuous Drain Current (I_D, Tc) | 50 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (V_GS max) | +/-20 V | — |
| Gate Threshold Voltage (V_GS(th) typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Static Drain-Source R_DS(on) max @ 10 V | 19 mOhm | — |
| Static Drain-Source R_DS(on) typ @ 10 V | [DATA_NEEDED: typical R_DS(on) at 10 V] | — |
| Total Power Dissipation (P_D, Tc=25C) | 125 W | — |
| İşletim Jant Sıcaklığı | -55C to +150C | — |
| Paket | SuperSO8 5x6 / PG-TDSON-8-1 | PG-TDSON-8-1 (TDSON-8 EP) |
| Montaj Türü | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL rating] | — |
| Pin Sayısı | 8 | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V |
| On-Resistance RDS(on) max at VGS=10V | — | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical at 10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| İşletim Sıcaklığı Aralığı | — | -55 C to +150 C |
| RoHS Durumu | — | Compliant |
| MSL Seviyesi | — | 1 |