BSC520N15NS3G vs BSC520N15NS3 Perbandingan
Perbandingan bersamaan detil BSC520N15NS3G dari Infineon dan BSC520N15NS3 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC520N15NS3G | BSC520N15NS3 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC520N15NS3 G | — |
| Technology | OptiMOS 3 (trench-gate N-channel) | OptiMOS 3, N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | 150 V | — |
| Continuous Drain Current (ID) max at TC=25C | 21 A | — |
| On-Resistance RDS(on) max | 52 mΩ at VGS=10 V | — |
| Power Dissipation (Ptot) at TC=25C | 57 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Suhu Hubung Kerja | -55C to +150C | -55C to +150C |
| Paket | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8, 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified per JEDEC | — |
| Channel Type | N-Channel (normal level) | — |
| Typical Application | DC-DC conversion, synchronous rectification | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, TC=25C) | — | 21 A |
| Pulsed Drain Current (IDM) | — | 84 A |
| On-State Resistance RDS(on) max (VGS=10V) | — | 52 mOhm |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Gate Threshold Voltage VGS(th) typ | — | 3 V |
| Power Dissipation (TC=25C) | — | 57 W |
| Level MSL | — | 1 |
| Status RoHS | — | Compliant |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Body Diode | — | Intrinsic, avalanche-rated |