BSC520N15NS3G vs BSC520N15NS3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC520N15NS3G disebabkan oleh Infineon dan BSC520N15NS3 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC520N15NS3G | BSC520N15NS3 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC520N15NS3 G | — |
| Technology | OptiMOS 3 (trench-gate N-channel) | OptiMOS 3, N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | 150 V | — |
| Continuous Drain Current (ID) max at TC=25C | 21 A | — |
| On-Resistance RDS(on) max | 52 mΩ at VGS=10 V | — |
| Power Dissipation (Ptot) at TC=25C | 57 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Suhu Hubungan Operasi | -55C to +150C | -55C to +150C |
| Kemasan | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8, 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified per JEDEC | — |
| Channel Type | N-Channel (normal level) | — |
| Typical Application | DC-DC conversion, synchronous rectification | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID, TC=25C) | — | 21 A |
| Pulsed Drain Current (IDM) | — | 84 A |
| On-State Resistance RDS(on) max (VGS=10V) | — | 52 mOhm |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Gate Threshold Voltage VGS(th) typ | — | 3 V |
| Power Dissipation (TC=25C) | — | 57 W |
| Aras MSL | — | 1 |
| Status RoHS | — | Compliant |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Body Diode | — | Intrinsic, avalanche-rated |