BSC520N15NS3G vs BSC520N15NS3 比較

詳細並排比較 BSC520N15NS3G 由 Infineon 與 BSC520N15NS3 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC520N15NS3G BSC520N15NS3G - 150V N-Ch 21A OptiMOS 3 MOSFET | Infineon

BSC520N15NS3G - 150V N-Ch 21A OptiMOS 3 MOSFET | Infineon

BSC520N15NS3G ✓ 啟用中
Infineon
BSC520N15NS3 BSC520N15NS3 - 150V 21A N-Ch OptiMOS 3 MOSFET | Infineon

BSC520N15NS3 - 150V 21A N-Ch OptiMOS 3 MOSFET | Infineon

BSC520N15NS3 ✓ 啟用中

規格比較

參數 BSC520N15NS3G BSC520N15NS3
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number BSC520N15NS3 G —
Technology OptiMOS 3 (trench-gate N-channel) OptiMOS 3, N-channel trench MOSFET
Drain-Source Voltage (VDS) max 150 V —
Continuous Drain Current (ID) max at TC=25C 21 A —
On-Resistance RDS(on) max 52 mΩ at VGS=10 V —
Power Dissipation (Ptot) at TC=25C 57 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
工作接面溫度 -55C to +150C -55C to +150C
封裝 PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO8, 5x6 mm)
安裝類型 Surface Mount Surface Mount
腳位數 8 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
JEDEC Qualification Qualified per JEDEC —
Channel Type N-Channel (normal level) —
Typical Application DC-DC conversion, synchronous rectification —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID, TC=25C) — 21 A
Pulsed Drain Current (IDM) — 84 A
On-State Resistance RDS(on) max (VGS=10V) — 52 mOhm
Gate-Source Voltage VGS max — +/- 20 V
Gate Threshold Voltage VGS(th) typ — 3 V
Power Dissipation (TC=25C) — 57 W
MSL 等級 — 1
RoHS 狀態 — Compliant
Avalanche Energy Rated — Yes (single-pulse)
Body Diode — Intrinsic, avalanche-rated

資料表與資源

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