BSD214SNH6327XTSA1 vs BSO613SPVGXUMA1 Perbandingan

Perbandingan bersamaan detil BSD214SNH6327XTSA1 dari Infineon dan BSO613SPVGXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSD214SNH6327XTSA1 BSO613SPVGXUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide), OptiMOS OptiMOS (Trench)
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
Paket SOT-363 (PG-SOT363-PO), 6-pin PG-DSO-8-6 (Power-SO-8)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs)
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
Status RoHS Compliant Compliant
Level MSL 1 MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8)
Standard Pack Quantity 3000 (Tape & Reel) —
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) at TA=25C — -3.44 A
Power Dissipation (PD) at TA=25C — 2.5 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max at VGS=10V]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) max at VGS=4.5V]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max +/-V]
Lead-Free — Yes
Avalanche Rated — Yes (per Infineon OptiMOS family)
Jumlah Pin — 8 (6 active, 2 thermal/NC)

Spek dan Sumber

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