BSD214SNH6327XTSA1 vs BSO613SPVGXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSD214SNH6327XTSA1 disebabkan oleh Infineon dan BSO613SPVGXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSD214SNH6327XTSA1 BSO613SPVGXUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide), OptiMOS OptiMOS (Trench)
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
Kemasan SOT-363 (PG-SOT363-PO), 6-pin PG-DSO-8-6 (Power-SO-8)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs)
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
Status RoHS Compliant Compliant
Aras MSL 1 MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8)
Standard Pack Quantity 3000 (Tape & Reel) —
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) at TA=25C — -3.44 A
Power Dissipation (PD) at TA=25C — 2.5 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max at VGS=10V]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) max at VGS=4.5V]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max +/-V]
Lead-Free — Yes
Avalanche Rated — Yes (per Infineon OptiMOS family)
Kiraan Pin — 8 (6 active, 2 thermal/NC)

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