BSL606SNH6327XTSA1 vs BSS606NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSL606SNH6327XTSA1 dari Infineon dan BSS606NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSL606SNH6327XTSA1 BSS606NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET (Enhancement Mode) N-Channel MOSFET
Technology OptiMOS3 trench MOSFET —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 4.5 A —
Static Drain-Source On-Resistance (RDS(on)) 60 mOhm (max, VGS = 10 V) —
Total Power Dissipation (PD) at Ta 2 W —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) 5.6 nC (max) —
Rentang Suhu Kerja -55C to +150C (Tj) —
Paket PG-TSOP6-6 (6-pin, SOT-23-6 compatible) PG-SOT-89 (TO-243AA)
Tipe Mounting Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) Automotive (per family page)
Status RoHS Compliant (Pb-free plating) Compliant
Level MSL 1 (per JEDEC J-STD-020) 1 (per SOT-89 family standard)
Manufacturer — Infineon Technologies
Product Family — OptiMOS Small Signal/Power
Continuous Drain Current (ID) — 3.2 A (Ta)
Power Dissipation (PD) — 1 W (Ta)
On-Resistance (RDS(on)) — 60 mΩ max @ VGS=10 V
Suhu Hubung Kerja — -55°C to +150°C
Lead-Free — Yes
Reel Quantity — 1000 pcs

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