BSL606SNH6327XTSA1 vs BSS606NH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSL606SNH6327XTSA1 sa pamamagitan ng Infineon at BSS606NH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon
BSL606SNH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSL606SNH6327XTSA1 | BSS606NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET (Enhancement Mode) | N-Channel MOSFET |
| Technology | OptiMOS3 trench MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 4.5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 60 mOhm (max, VGS = 10 V) | — |
| Total Power Dissipation (PD) at Ta | 2 W | — |
| Gate-Source Voltage (VGS) | +/-20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | 5.6 nC (max) | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (Tj) | — |
| Packhaging | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) | PG-SOT-89 (TO-243AA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | Automotive (per family page) |
| Tindminan RoHS | Compliant (Pb-free plating) | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 (per SOT-89 family standard) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS Small Signal/Power |
| Continuous Drain Current (ID) | — | 3.2 A (Ta) |
| Power Dissipation (PD) | — | 1 W (Ta) |
| On-Resistance (RDS(on)) | — | 60 mΩ max @ VGS=10 V |
| Temperature ng Junction na Operasyon | — | -55°C to +150°C |
| Lead-Free | — | Yes |
| Reel Quantity | — | 1000 pcs |