BSL606SNH6327XTSA1 vs BSS606NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSL606SNH6327XTSA1 disebabkan oleh Infineon dan BSS606NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSL606SNH6327XTSA1 BSS606NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET (Enhancement Mode) N-Channel MOSFET
Technology OptiMOS3 trench MOSFET —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 4.5 A —
Static Drain-Source On-Resistance (RDS(on)) 60 mOhm (max, VGS = 10 V) —
Total Power Dissipation (PD) at Ta 2 W —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) 5.6 nC (max) —
Gambaran Suhu Operasi -55C to +150C (Tj) —
Kemasan PG-TSOP6-6 (6-pin, SOT-23-6 compatible) PG-SOT-89 (TO-243AA)
Jenis Pemasangan Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) Automotive (per family page)
Status RoHS Compliant (Pb-free plating) Compliant
Aras MSL 1 (per JEDEC J-STD-020) 1 (per SOT-89 family standard)
Manufacturer — Infineon Technologies
Product Family — OptiMOS Small Signal/Power
Continuous Drain Current (ID) — 3.2 A (Ta)
Power Dissipation (PD) — 1 W (Ta)
On-Resistance (RDS(on)) — 60 mΩ max @ VGS=10 V
Suhu Hubungan Operasi — -55°C to +150°C
Lead-Free — Yes
Reel Quantity — 1000 pcs

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga