BSO150N03MDGXUMA1 vs BSO613SPVGXUMA1 Perbandingan

Perbandingan bersamaan detil BSO150N03MDGXUMA1 dari Infineon dan BSO613SPVGXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSO150N03MDGXUMA1 BSO613SPVGXUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSO150N03MDGXUMA1 —
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS 3M (30V trench MOSFET) OptiMOS (Trench)
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max per channel 9.3 A —
On-State Resistance (RDS(on)) max 15 mOhm at VGS=10V —
Gate-Source Voltage (VGS) max 20 V [DATA_NEEDED: VGS max +/-V]
Gate Threshold Voltage (VGS(th)) typ 1.0 V —
Power Dissipation (PD) max 1.4 W —
Rentang Suhu Kerja -55C to +150C -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs)
Paket PG-DSO-8 (SO-8 with exposed pad) PG-DSO-8-6 (Power-SO-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8)
Status RoHS Compliant Compliant
Channel Configuration Dual N-Channel (independent) —
FET Type — P-Channel
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) at TA=25C — -3.44 A
Power Dissipation (PD) at TA=25C — 2.5 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max at VGS=10V]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) max at VGS=4.5V]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Lead-Free — Yes
Avalanche Rated — Yes (per Infineon OptiMOS family)
Jumlah Pin — 8 (6 active, 2 thermal/NC)

Spek dan Sumber

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