BSO613SPVGXUMA1 vs BSS127H6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSO613SPVGXUMA1 dari Infineon dan BSS127H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSO613SPVGXUMA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS) -60 V 600 V
Continuous Drain Current (ID) at TA=25C -3.44 A —
Power Dissipation (PD) at TA=25C 2.5 W —
Paket PG-DSO-8-6 (Power-SO-8) SOT-23-3 (PG-SOT23)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS (Trench) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] 4.5 V (logic level, rated)
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max at VGS=10V] —
RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) max at VGS=4.5V] —
Rentang Suhu Kerja -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-V] [DATA_NEEDED: VGS max rating]
Level MSL MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant (lead-free)
Lead-Free Yes —
Avalanche Rated Yes (per Infineon OptiMOS family) —
Jumlah Pin 8 (6 active, 2 thermal/NC) 3
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) — 500 mW (Ta)
Suhu Hubung Kerja — -55 C to +150 C
dv/dt Rated — Yes
Automotive Qualification — AEC-Q101
Bebas Halogen — Yes, per IEC 61249-2-21

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